Preparation of layer-structured CaBi2Ta2O9 ferroelectric thin films through a triple alkoxide route

A triple alkoxide solution for CaBi2Ta2O9 (CBT) thin films was prepared. CB T thin films were deposited on Pt-passivated silicon and Pt-passivated quar tz glass substrates. The thin films on Pt-passivated silicon crystallized t o form the perovskite structure at low temperatures and showed preferred or ientation along the c-axis. The thin films did not show ferroelectric P-E h ysteresis loops. In contrast, the 750 degreesC-annealed thin film on Pt-pas sivated quartz glass showed random orientation and exhibited excellent P-E hysteresis loops. The remanent polarization (P-r) and the coercive electric field (E-c) at 13V were 6.9 muC/cm(2) and 170 kV/cm, respectively.