With InGaAs quantum dots (QDs) embedded in the vicinity, GaAs/AlGaAs two-di
mensional electron gas (2DEG) was studied by transport measurements and by
calculations with QDs charges as Coulomb scattering centers. The mobility o
f 2DEG decreases with increasing QDs density up to 5 x 10(10) cm(-2), which
can be fitted by considering the finite spatial extension of QD-charge dis
tribution. However, two distinct effects are observed as the QDs density in
creases from 5 x 10(10) cm(-2) to 2 x 10(11) cm(-2). One is that the 2DEG m
obility is saturated at a low level, and the other is that it gradually app
roaches the high value of 2DEG without QDs. The former can be reproduced by
taking into account the interdot overlapping of electron probability distr
ibutions, while the latter is argued to be the result of interdot coupling
through wavefunction overlapping. These explanations are supported further
by the temperature dependence of the conductance.