Selective disordering of InGaAs strained quantum well by rapid thermal annealing with SiO2 caps of different thicknesses for photonic integration

Area-selective disordering of an InGaAs strained quantum well was performed by rapid thermal annealing with thick and thin SiO2 caps. The lasing wavel ength difference as large as 23 nm was obtained between Fabry-Perot lasers in 300 nm and 30 nm capped areas. We present fabrication of lasers integrat ed with disordered passive waveguides and demonstrate significant reduction of the passive waveguide loss from roughly 40 cm(-1) to 3 cm(-1).