Single-oriented growth of (111) Cu film on thin ZrN/Zr bilayered film for ULSI metallization

We investigated the influence of ZrN/Zr bilayered film thickness on the (11 1) Cu orientation and the thermal stability of the Cu/ZrN/Zr/Si contact sys tem by X-ray diffraction and Anger electron spectroscopy analyses. We confi rmed that the single-oriented growth of (111) Cu can be realized by interpo sing the ZrN (400 Angstrom)/Zr (200 Angstrom) bilayered film between Cu and Si. It was revealed that the (111) Cu/(111) ZrN/(002) Zr(001) Si contact s ystem is satisfactorily stable up to 600 degreesC without undesirable inter facial reaction and interdiffusion, maintaining the low contact resistivity of the ZrSi2 adhesion layer at the Si interface and the single-oriented st ate of the (111) Cu overlayer.