Effect of hydrogen plasma treatment on formation of amorphous silicon filmusing organosoluble silicon cluster as a precursor

A novel process for the formation of amorphous silicon thin film by a coati ng technique using an organosoluble silicon cluster as a precursor was deve loped. The process of conversion of organic silicon film to inorganic silic on film was investigated by Raman and Fourier transform infrared (FT-IR) sp ectroscopies. Upon heat treatment of the precursor film, the disappearance of the organic substituent and the appearance of the transverse optical pho non band of amorphous silicon were observed in Raman spectra. The combinati on of heal and hydrogen plasma treatments of the thin film reduced the conv ersion temperature dramatically.