Temperature and annealing effects on photoluminescence spectra of (InAs)(1)/(GaP)(2) superlattices grown by solid-source molecular beam epitaxy

Anomalous variation of photoluminescence (PL) wavelengths with temperature was observed in (InAs)(1)/(GaP)(2) short-period-superlattice (SPS) quantum wells grown by solid-source molecular beam epitaxy with different phosphoru s and arsenic cracker temperatures. We believed that the anomalous PL behav ior could be attributed to the multi-axial strain effect existed at the abr upt InAs and GaP interfaces in the SPS structure. After rapid thermal annea l (RTA) treatment, the anomalous PL spectra in the low temperature region d isappeared but the high temperature PL characteristics remained, which reve aled the thermal stability of the (InAs)(1)/(GaP)(2) quantum well structure s and its potential in replacing InGaAsP quaternary.