Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

A surface model is presented for the etching of silicon (Si) and silicon di oxide (SiO2) in fluorocarbon plasmas. Etching and deposition are accounted for using a generalized concept for the "polymer surface coverage," which i s found to be equivalent to a normalized fluorocarbon film thickness coveri ng the etched surfaces. The model coefficients are obtained from fits to av ailable beam experimental data, while the model results are successfully co mpared with high-density plasma etching data. (C) 2000 American Institute o f Physics. [S0021-8979(00)02521-4].