Diffusions in (In,Se)-Cu(In,Ga)Se-2/SnO2 thin film structures

Citation
K. Djessas et al., Diffusions in (In,Se)-Cu(In,Ga)Se-2/SnO2 thin film structures, J APPL PHYS, 88(10), 2000, pp. 5710-5715
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
10
Year of publication
2000
Pages
5710 - 5715
Database
ISI
SICI code
0021-8979(20001115)88:10<5710:DI(TFS>2.0.ZU;2-X
Abstract
In this article we study (In,Se)-Cu(In,Ga)Se-2/SnO2 thin film heterostructu res for solar cells, the light coming through SnO2. The Cu(In,Ga)Se-2 layer s were grown by close-spaced vapor transport and the (In,Se) layers by clos e-spaced sublimation. We first clear up the main results obtained in the fa brication and characterization of the samples. Then, the diffusion mechanis ms appearing in these structures are studied, from secondary ion mass spect roscopy studies. Copper diffusion is probably the key of the creation of a p-n junction lying near SnO2 and responsible for the photovoltaic effect th at is observed. (C) 2000 American Institute of Physics. [S0021-8979(00)0312 3-6].