Nn. Iosad et al., Properties of (Nb-0.35, Ti-0.15)(x)Ni1-x thin films deposited on silicon wafers at ambient substrate temperature, J APPL PHYS, 88(10), 2000, pp. 5756-5759
We have studied the properties of (Nb-0.35, Ti-0.15)(x)N1-x films deposited
by reactive magnetron sputtering at ambient substrate temperature, focusin
g in particular on the dependence of film properties on the total sputterin
g pressure. As the pressure increases we observe a transition in the film s
tructure from the ZT to the Z1 structural zone according to the Thornton cl
assification. In general, the superconducting transition temperature (T-c)
and residual resistance ratio have a very moderate dependence on total sput
tering pressure, while the film resistivity increases an order of magnitude
as the sputtering pressure increases. A wide spectrum of material science
techniques is used to characterize the films and to explain the relationshi
p between the sputtering conditions and film properties. Transmission elect
ron microscopy and x-ray diffraction analysis show that 160-nm-thick (Nb-0.
35, Ti-0.15)(x)N1-x films consist of 20-40 nm grains with good crystallinit
y. Films sputtered under low pressures have a weak [100] texture, while fil
ms sputtered under high pressures have a distinct [111] texture. A stable c
hemical composition and reduction in film density as the sputtering pressur
e increases indicate that the change of resistivity in the ZT structural zo
ne is due to a variation in the quenched-in vacancy concentration. In contr
ast voids on the grain boundaries and vacancies together produce the high f
ilm resistivities in the Z1 structural zone. (C) 2000 American Institute of
Physics. [S0021-8979(00)02723-7].