Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN

Citation
Dc. Reynolds et al., Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN, J APPL PHYS, 88(10), 2000, pp. 5760-5763
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
10
Year of publication
2000
Pages
5760 - 5763
Database
ISI
SICI code
0021-8979(20001115)88:10<5760:CEOSAB>2.0.ZU;2-S
Abstract
The energy positions of the optical transitions in both GaN and ZnO were in vestigated when the samples were excited simultaneously with a HeCd laser a nd an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effectively screen both the free exciton and bound excit on transitions, resulting in a blueshift. The increased number of free elec trons also produces many-body effects, which lead to a reduction of the ban d gap energy and thus a redshift. The resultant of screening and renormaliz ation results in a redshift of the optical transitions in ZnO but a nearly vanishing shift in GaN. (C) 2000 American Institute of Physics. [S0021-8979 (00)05123-9].