Verification of hot hole scattering rates in silicon by quantum-yield experiment

High-energy hole scattering rates for a full-band Monte Carlo simulation in Si are verified using a quantum-yield experiment. We compare two models th at yield the correct drift velocity and ionization coefficient but quite di fferent energy distributions. It is demonstrated that the quantum-yield exp eriment provides a means for monitoring hole scattering rates in Si; the mo del based on the ab initio impact ionization rate shows good agreement with the experiments, while the random-k approximation proposed by Kane overest imates the ionization rate of holes near the threshold energy. (C) 2000 Ame rican Institute of Physics. [S0021-8979(00)07222-4].