Bimolecular recombination quenching in langmuir Blodgett multilayers

A model is developed that describes bimolecular recombination of photogener ated carriers in two dimensional systems. Carriers are free to diffuse in t wo dimensions and undergo bimolecular recombination, while drifting under t he influence of an electric field in the third dimension. The model describ es a competition between carrier loss due to transiting and loss due to bim olecular recombination. This model of recombination quenching is then used to obtain information on microscopic parameters associated with photogenera tion efficiency and charge transport in organic quantum wells formed from L angmuir Blodgett films of conjugated molecules. The ratio of the intralayer to interlayer tunneling rates is found along with the quantum efficiency f or photocarrier generation for two bis-phthalocyanine amphiphilic molecules . (C) 2000 American Institute of Physics. [S0021-9606(00)70841-5].