Epitaxial ZnO films were grown on two polar surfaces (O-surface and Zn-surf
ace) of (0001) ZnO single-crystal substrates using off-axis magnetron sputt
ering deposition. It was found that the two polar ZnO surfaces have differe
nt surface structure and morphology, which strongly influence epitaxial fil
m growth. An interesting result shows that high-temperature annealing of Zn
O single crystals will improve the surface structure on the O-terminated su
rface rather than the opposite surface. The morphology and structure of hom
oepitaxial films grown on the ZnO substrates were different from heteroepit
axial films grown on the Al2O3. The measurements of low-angle incident X-ra
y diffraction and atomic force microscopy of ZnO films indicate that the O-
terminated surface is better for ZnO epitaxial film growth. (C) 2000 Publis
hed by Elsevier Science B.V.