EXAFS and electrical studies of new narrow-gap semiconductors: InTe1-xSex and In1-xGaxTe

Authors
Lebedev, AI Michurin, AV Sluchinskaya, IA Demin, VN Munro, IH
Citation
Ai. Lebedev et al., EXAFS and electrical studies of new narrow-gap semiconductors: InTe1-xSex and In1-xGaxTe, J PHYS CH S, 61(12), 2000, pp. 2007-2012
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
61
Issue
12
Year of publication
2000
Pages
2007 - 2012
Database
ISI
SICI code
0022-3697(200012)61:12<2007:EAESON>2.0.ZU;2-J
Abstract
The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms ar e substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed t hat In1-xGaxTe and InTe1-xSex solid solutions become semiconductors at x > 0.24 and > 0.15, respectively. (C) 2000 Elsevier Science Ltd. All rights re served.