On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique

A recently developed new experimental-analytical x-ray diffraction method f or the direct non-destructive characterization of single-crystal alloys is applied to map the complex structure-factor of InGaAs/GaAs multi-quantum we lls. The technique is based on analytical measurements of the x-ray phase a nd amplitude changes in a narrow polychromatic region of synchrotron radiat ion. High-resolution, x-ray Bragg diffraction profiles have been collected at the European Synchrotron Radiation Facility near the absorption edge of Ga. The studies have allowed the observation and preliminary analysis of fi ne structure of nanoscale sublayers, where the crystal structure factor may noticeably differ from the bulk material. These results might allow direct and quantitative analysis of the exact location and nature of relaxation d efects in single-crystal multilayer structures.