The switching effects in SbxSe1-x (0 less than or equal to x less than or e
qual to 0.9) thin films have been investigated. The annealing of the films
at 323 K improves the switching characteristics and decreases the threshold
voltage V-th The threshold switching voltage and threshold activation ener
gy epsilon (s) were found to decrease linearly on increasing the antimony c
ontent. Moreover, the threshold switching voltage increased exponentially w
ith temperature.