Threshold switching effects in SBxSe1-x thin films

Authors
Aly, EH Ibrahim, AM
Citation
Eh. Aly et Am. Ibrahim, Threshold switching effects in SBxSe1-x thin films, J PHYS D, 33(20), 2000, pp. 2549-2552
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
20
Year of publication
2000
Pages
2549 - 2552
Database
ISI
SICI code
0022-3727(20001021)33:20<2549:TSEIST>2.0.ZU;2-9
Abstract
The switching effects in SbxSe1-x (0 less than or equal to x less than or e qual to 0.9) thin films have been investigated. The annealing of the films at 323 K improves the switching characteristics and decreases the threshold voltage V-th The threshold switching voltage and threshold activation ener gy epsilon (s) were found to decrease linearly on increasing the antimony c ontent. Moreover, the threshold switching voltage increased exponentially w ith temperature.