The intrinsic relation between field electron emission and structure characteristics of amorphous diamond film

Citation
Ns. Xu et al., The intrinsic relation between field electron emission and structure characteristics of amorphous diamond film, J PHYS D, 33(20), 2000, pp. 2568-2572
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
20
Year of publication
2000
Pages
2568 - 2572
Database
ISI
SICI code
0022-3727(20001021)33:20<2568:TIRBFE>2.0.ZU;2-Q
Abstract
Stable electron emission from amorphous diamond film at a low threshold fie ld of 6-7 mV m(-1) has been observed using a transparent anode technique. T he electron emission characteristics are discussed in terms of the structur al properties of films. Using scanning electron microscopy and Raman spectr a, the emitting and the non-emitting regions of the amorphous diamond film are analysed. The emitting regions exhibit rougher microstructure in morpho logy and a stronger Raman peak at 1360 cm(-1) than the non-emitting regions , a signature of having more micro-sp(2) components. It is suggested that f ield emission is prone to take place at the regions containing more sp(2) n anoclusters or nanocrystalline graphite.