THE RELATION BETWEEN ION DAMAGE ANISOTROPY AND IBAD YSZ BIAXIAL ALIGNMENT

Anisotropic damage tolerance is examined in relation to the in-plane o rientations of (200) biaxially aligned yttria-stabilized zirconia (YSZ ) films fabricated using dual ion beam deposition and ion beam assiste d electron beam deposition. It is shown that ion channelling and aniso tropic ion etching are not associated with IBAD biaxial alignment. The mechanism of IBAD biaxial alignment is crystallographic orientation c hange to reduce ion damage. The aggregation of defects leads to the fo rmation of low angle grain boundaries that enable the growth direction change, Damage-tolerant crystalline planes are aligned in the directi on of the assisting ion beam through the growth direction change.