GROWTH OF BIAXIALLY ALIGNED BUFFER LAYERS FOR YBCO TAPES BY ION-BEAM-ASSISTED LASER DEPOSITION AND IN-SITU RHEED TEXTURE ANALYSIS

Biaxially oriented yttria-stabilized zirconia (YSZ) buffer layers were grown at room temperature by Pulsed Laser Deposition (PLD) and Ion-Be am assisted Laser Deposition (IBALD) on amorphous substrates, Dependen t on deposition parameters, IBALD grown films showed in-plane orientat ions of up to 20 degrees FWHM (full-width at half maximum). Film in-pl ane alignment increases with film thickness. Film growth at room tempe rature without assisting ion-beam was polycrystalline with a growth-ra te dependent preferred orientation. (011)- and (001)-oriented films we re obtained for growth rates of 10 Angstrom/s and 14 Angstrom/s, respe ctively. YSZ film growth orientation was monitored in situ with reflec tion high-energy electron diffraction. A quantitative analysis of the in-plane orientation of the IBALD grown YSZ film surfaces was establis hed.