Mj. Deen et S. Rumyantsev, Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors, MICROEL REL, 40(11), 2000, pp. 1855-1861
Low frequency noise characteristics of high voltage, high performance compl
ementary polysilicon emitter bipolar transistors are described. The influen
ce of the base biasing resistance, emitter geometry and temperature on the
noise spectra are discussed. The npn transistors studied exhibited 1/f and
shot noise, but the pnp transistors are characterized by significant genera
tion-recombination noise contributions to the total noise. For both types o
f transistors, the measured output noise is determined primarily by the noi
se sources in the polysilicon-monosilicon interface. The level of the 1/f n
oise is proportional to the square of the base current for both npn and pnp
transistors. The contribution of the 1/f noise in the collector current is
also estimated. The area dependence of 1/f noise in both types of transist
ors as well as other npn bipolar transistors are presented. (C) 2000 Elsevi
er Science Ltd. All rights reserved.