M. Sanden et al., Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors, MICROEL REL, 40(11), 2000, pp. 1863-1867
The effect of hydrogen passivation by forming gas annealing (FGA) on the bi
polar junction transistor low frequency noise was investigated. The results
demonstrated a reduced 1/f noise component by a factor of five after FGA,
which resulted in a reduced corner frequency. An equivalent input noise spe
ctral density (S-IB) dependence on base current (IB) of S-IB similar to I-B
(2) and on emitter area (A(E)) of S-IB similar to A(E)(-1) was observed, bo
th before and after FGA. The interpretations of the results were (a) the 1/
f noise was due to carrier number fluctuation, (b) the noise sources were h
omogeneously distributed over the polysilicon/monosilicon emitter interfaci
al oxide, and (c) the noise sources were passivated by hydrogen. (C) 2000 E
lsevier Science Ltd. All rights reserved.