Characterization of generation-recombination noise using a physics-based device noise simulator

The implementation of generation-recombination (g-r) noise in a partial dif ferential equation based device simulator is presented. Derived from the Sh ockley-Read-Hall model, the strength of each local g-r noise source is calc ulated based on the carrier transition rates between the conduction band, v alence band, and trap states. The perturbations of these local g-r noise so urces are then transmitted to the electrodes of the simulated device throug h scalar Green's functions, g-r noise simulations are compared with existin g measurements made on a four trap level, p-type silicon resistor. Good agr eement between measured and simulated data is observed. (C) 2000 Elsevier S cience Ltd. All rights reserved.