Low frequency noise in gate and drain of PHEMT's and related correlation

Low frequency noise investigations have been carried out in GaAs based psue domorphic high electron mobility in order to model the up-converted noise i n nonlinear applications of these devices. Gate and channel noises are stud ied versus frequency and versus device biases. The results are analysed wit h an equivalent circuit issued from conduction investigations. Correlation between input and output noises is also measured. For V-GS < 0 V, the main origin of the coherence is located between gate and drain, whereas for V-DS > 0 V, the access source resistance must be taken into account. (C) 2000 E lsevier Science Ltd. All rights reserved.