The effect of electrical stress on the low frequency noise in heterostructu
re field effect transistors is investigated in detail and is compared to th
e DC characteristics. Additionally, a model has been developed to describe
the increase of the low frequency noise, depending on the change of other t
ransistor parameters during the stress. Finally, a discussion about the mod
el ability to be used for other devices is given. (C) 2000 Elsevier Science
Ltd. All rights reserved.