The low frequency noise in HFETs estimates the effect of electrical stress

Authors
Marinov, O
Citation
O. Marinov, The low frequency noise in HFETs estimates the effect of electrical stress, MICROEL REL, 40(11), 2000, pp. 1959-1963
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
11
Year of publication
2000
Pages
1959 - 1963
Database
ISI
SICI code
0026-2714(200011)40:11<1959:TLFNIH>2.0.ZU;2-G
Abstract
The effect of electrical stress on the low frequency noise in heterostructu re field effect transistors is investigated in detail and is compared to th e DC characteristics. Additionally, a model has been developed to describe the increase of the low frequency noise, depending on the change of other t ransistor parameters during the stress. Finally, a discussion about the mod el ability to be used for other devices is given. (C) 2000 Elsevier Science Ltd. All rights reserved.