Skewness and kurtosis of 1/f noise in semiconductor devices

An experimental investigation of the third and fourth moments of the 1/f no ise of two different electronic devices is reported. The skewness and the k urtosis of the noise voltage data are estimated. Although the devices under investigation have similar noise power spectral density, the time waveform s are shown to have slightly different statistical properties. In both case s, a small deviation from Gaussian distribution is observed. (C) 2000 Elsev ier Science Ltd. All rights reserved.