FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING PROCESS FOR FABRICATION OF HG-BASED SUPERCONDUCTING THIN-FILMS

Authors
WU JZ YUN SH GAPUD A KANG BW KANG WN TIDROW SC ECKART D CUI XT CHU WK
Citation
Jz. Wu et al., FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING PROCESS FOR FABRICATION OF HG-BASED SUPERCONDUCTING THIN-FILMS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 1907-1910
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
7
Issue
2
Year of publication
1997
Part
2
Pages
1907 - 1910
Database
ISI
SICI code
1051-8223(1997)7:2<1907:FTRHAP>2.0.ZU;2-I
Abstract
Growth mechanism of superconducting Hg-based cuprate thin films has be en studied by changing the sample heating rate in Hg-vapor annealing p rocess. A fast temperature ramping Hg-vapor annealing (FTRA) process h as been found to be beneficial to the growth of high quality c-axis or iented epitaxial HgBa2CaCu2O6+delta films with zero-resistance T-c up to 124 K and HgBa2Ca2Cu3O8+delta films with zero-resistance T-c up to 130 K on SrTiO3 and LaAlO3 substrates. The high J(c)'s carried by thes e films makes them promising for many applications.