Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study

Citation
Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
16
Year of publication
2000
Pages
R10607 - R10609
Database
ISI
SICI code
0163-1829(20001015)62:16<R10607:GDIAZG>2.0.ZU;2-D
Abstract
A detailed study of as-grown Zn-doped GaN employing optically detected magn etic resonance (ODMR) spectroscopy is presented. Besides the well-known ODM R spectra of an effective-mass-like donor and Zn acceptor, a positive ODMR signal of an S = 1/2 paramagnetic center was observed when monitoring the d ominating blue luminescence band peaking at 2.8 eV. The involvement of a si ngle Ga nucleus in the defect center is revealed from the rather well-resol ved hyperfine interactions involving the isotopes Ga-71 (39.9%) and Ga-69 ( 60.1%), both with nuclear spin I = 3/2. The C-3 nu symmetry, the hyperfine interaction and the defect formation suggest a Ga-related complex nature of this center.