Koster-Slater model for the interface-state problem

Citation
M. Di Ventra et al., Koster-Slater model for the interface-state problem, PHYS REV B, 62(16), 2000, pp. R10622-R10625
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
16
Year of publication
2000
Pages
R10622 - R10625
Database
ISI
SICI code
0163-1829(20001015)62:16<R10622:KMFTIP>2.0.ZU;2-S
Abstract
A Koster-Slater approach to the problem of localized states at semiconducto r interfaces has been developed. It allows us to relate the existence and/o r the energy position of interface states to some essential bulk features o f the constituent materials and some interface-bonding parameters. The cond ition for the existence of localized states and the relevance of the model will be discussed comparing the predictions entailed by the latter with the results of ab initio calculations on the Ge/GaAs (110) interface.