A light-emitting field-effect transistor

We report here on the structure and operating characteristics of an ambipol ar Light-emitting field-effect transistor based on single crystals of the o rganic semiconductor alpha -sexithiophene, Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations a re controlled by the applied gate and drain-source voltages. Excitons are g enerated, Leading to radiative recombination. Moreover, above a remarkably Low threshold current, coherent light is emitted through amplified spontane ous emission. Hence, this three-terminal device is the basis of a very prom ising architecture for electrically driven laser action in organic semicond uctors.