Boron ion implantation effects in C-60 films

An attempt has been made on the device fabrication with boron ion implanted C-60 thin films. The C-60 thin films evaporated on n-type Si (100) have be en implanted with mass analyzed positive boron ions at a fixed energy of 80 keV to different doses in the range 1 x 10(12) - 1 x 10(15) ions/cm(2). Ra man scattering and FTIR studies of the high-dose implanted films reveal the formation of amorphous carbon layer. Hall effect measurements indicate the formation of p-type conductivity in C-60 thin films with boron ion implant ation. In order to realize uniform boron distribution in the C-60 films, mu ltiple boron implantation with energies in the range of 50-80 keV has been examined and p-type C-60/n-type Si heterojunction solar cells with an effic iency as high as 0.023% have been fabricated. The photovoltaic properties o f the solar cell structure are discussed along with the dark and illuminate d I-V characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.