Electrical and optical properties of ZnO thin film as a function of deposition parameters

Al-doped zinc oxide (AZO) and undoped zinc oxide (ZO) films have been prepa red by rf magnetron sputtering. Films with low resistivities were achieved by using an Al-doped ZnO target and films with higher resistivities can be obtained by introducing oxygen during deposition. An AZO thin film which wa s fabricated with an rf power of 180 W, a sputtering pressure of 10 mTorr a nd thickness of 5000 Angstrom showed the lowest resistivity of 1.4 x 10(-4) Ohm cm and transmittance of 95% in the visible range, and ZO film made by reactive sputtering with the above 10% oxygen content had the highest resis tivity of 6 x 10(14) Ohm cm. (C) 2001 Elsevier Science B.V. All rights rese rved.