2D-numerical analysis and optimum design of thin film silicon solar cells

Device modeling for p-i-n junction muc-Si basis thin film polycrystalline S i solar cells has been examined with a simple model of columnar grain struc ture and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage (V-oc) and curve fill factor (FF) considerably depend on those str uctural parameters, while short-circuit current density (J(sc)) is comparat ively stable by courtesy of homogeneous built-in electric field in the i la yer. It has also been found that conversion efficiency over 12% could be ex pected with 1 mum grain size and well-passivated condition with 3 mum thick i-layer. (C) 2001 Elsevier Science B.V. All rights reserved.