Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods

Authors
von Aichberger, S Schieck, R Kunst, M
Citation
S. Von Aichberger et al., Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods, SOL EN MAT, 65(1-4), 2001, pp. 111-117
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
111 - 117
Database
ISI
SICI code
0927-0248(200101)65:1-4<111:SACOSJ>2.0.ZU;2-O
Abstract
a-Si:H/c-Si junctions were investigated by contactless photoconductivity me asurements in the microwave frequency range, The dependence of the junction properties on the thickness of the a-Si:H films was determined via a chara cterization by the interface recombination velocity at the junction at a fi xed injection level. It is shown that the differential recombination rate a t the junction as a function of the injection level yields information on b and bending and interface defect density. The separation and collection of excess charge carriers at the junction was observed with time-resolved meas urements, (C) 2001 Published by Elsevier Science B.V. All rights reserved.