Progress in monolithic series connection of wafer-based crystalline silicon solar cells by the novel 'HighVo' (High Voltage) cell concept

Authors
Scheibenstock, S Keller, S Fath, P Willeke, G Bucher, E
Citation
S. Scheibenstock et al., Progress in monolithic series connection of wafer-based crystalline silicon solar cells by the novel 'HighVo' (High Voltage) cell concept, SOL EN MAT, 65(1-4), 2001, pp. 179-184
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
179 - 184
Database
ISI
SICI code
0927-0248(200101)65:1-4<179:PIMSCO>2.0.ZU;2-U
Abstract
Progress in the development of the new HighVo cell concept for monolithic s eries connection of wafer-based crystalline silicon solar cells is presente d. HighVo cells have been produced using standard low-cost silicon wafer te chnology without any photo lithographic masking step. The cells obtained wi th a total area of 21cm(2) exhibited a voltage at the maximum power point V -MPP of 2.8 V and a conversion efficiency eta of 11.4 %. To our knowledge t his is the highest conversion efficiency reported so far for monolithically integrated non-thin-film silicon solar cells. (C) 2001 Published by Elsevi er Science B.V. All rights reserved.