Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Authors
Han, Y Kim, D Cho, JS Koh, SK Song, YS
Citation
Y. Han et al., Tin-doped indium oxide (ITO) film deposition by ion beam sputtering, SOL EN MAT, 65(1-4), 2001, pp. 211-218
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
211 - 218
Database
ISI
SICI code
0927-0248(200101)65:1-4<211:TIO(FD>2.0.ZU;2-I
Abstract
Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. Th is paper aimed at the reach of high conductivity and high transmittance sim ultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxyg en gas Rowing rate on the properties of deposited ITO films were investigat ed. Resistivity showed the lowest value of 1.5 x 10(-4) Omega cm on the fil ms deposited by 1.3 keV Ar ions at 100 degreesC. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of tra nsmittance in the visible wavelength including that of the glass substrate. (C) 2001 Elsevier Science B.V. All rights reserved.