Experimental evidence of very high open-circuit voltages of inversion-layer silicon solar cells

In this paper the first experimental evidence of the high V-oc-potential of inversion-layer silicon solar cells is given. Minority-carrier lifetime me asurements on inversion-layer emitters have been performed and the diffused p-n contact of PN-IL silicon solar cells has been optimized for high open- circuit voltages. PN-IL silicon solar cells with open-circuit voltages of 6 93 mV have been fabricated on 0.2 and 0.5-Ohm cm FZ p-Silicon wafers. These values are the highest ever reported V-oc 's for inversion-layer silicon s olar cells on p-Silicon. This demonstrates that inversion-layer silicon sol ar cells exhibit a similar potential for achieving high open-circuit voltag es as silicon solar cells with a diffused p-n junction. (C) 2001 Published by Elsevier Science B.V. All rights reserved.