Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers

Authors
Mimura, M Ishikawa, S Saitoh, T
Citation
M. Mimura et al., Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers, SOL EN MAT, 65(1-4), 2001, pp. 459-463
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
459 - 463
Database
ISI
SICI code
0927-0248(200101)65:1-4<459:EOTAOM>2.0.ZU;2-U
Abstract
Effects of high-temperature annealing conditions on minority-carrier-lifeti me variation have been investigated for multicrystalline Si wafers. Lifetim e recovery peaks appear obviously at temperatures over 1000 degreesC for th e multicrystalline Si wafers, which is the same as for FZ and CZ single waf ers. Bulk lifetimes degrade after a further long-time annealing in oxygen. This suggests that there exists the filling of vacancies with interstitial Si atoms generated at the Si surfaces during high-temperature annealing. (C ) 2001 Elsevier Science B.V. All rights reserved.