Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films

Authors
Bourdais, S Beaucarne, G Slaoui, A Poortmans, J Semmache, B Dubois, C
Citation
S. Bourdais et al., Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films, SOL EN MAT, 65(1-4), 2001, pp. 487-493
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
487 - 493
Database
ISI
SICI code
0927-0248(200101)65:1-4<487:CSORAC>2.0.ZU;2-B
Abstract
In this paper, the emitter formation on polycrystalline silicon (with grain size of 0.5-10 mum) deposited by chemical vapour deposition (CVD) on forei gn substrates (thermal SiO2 and mullite ceramic) is studied. Phosphorus dop ing efficiency by POCl3 diffusion, APCVD + drive-in diffusion, and also rap id-thermal diffusion (RTD) from spin-on doping (SOD) sources were compared. For the first time, we report on photovoltaic results obtained on RTD-diff used emitters on pc-Si active layers deposited by rapid-thermal CVD, thus o pening the way to an all rapid-thermal process for solar cell fabrication. (C) 2001 Elsevier Science B.V. All rights reserved.