Back-contacted cells offer multiple advantages in regard of reducing module
assembling costs and avoiding grid shadowing losses. The investigated emit
ter-wrap-through (EWT) design is equipped with a front and a rear emitter (
Gee et al., Proceedings of the 23th IEEE PVSC, 1993, p. 265). Both emitter
areas are electrically connected by small holes drilled into the crystallin
e silicon wafer. Renouncing on expensive photolithographic steps several te
chniques appropriate for a low-cost process have been investigated. An incr
ease in J(sc) of 15% was measured when compared to a conventionally process
ed reference cell. However, the open-circuit voltage V-oc and the fill fact
or did not improve. Possible reasons for these losses are presented in this
paper. The efficiency of one of the best low-cost EWT cells within this wo
rk reached 13.6% on Ct-silicon, which is the highest efficiency reported so
far for this cell type (Schonecker et al., Proceedings of the Second WCPSE
C, 1998, p. 1677). (C) 2001 Elsevier Science B.V. All rights reserved.