Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

Authors
Hefyene, N Cristoloveanu, S Ghibaudo, G Gentil, P Moriyasu, Y Morishita, T Matsui, M Yasujima, A
Citation
N. Hefyene et al., Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films, SOL ST ELEC, 44(10), 2000, pp. 1711-1715
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1711 - 1715
Database
ISI
SICI code
0038-1101(200010)44:10<1711:AOTPTF>2.0.ZU;2-X
Abstract
The transport properties at the Si-Al2O3 interface are probed directly on v irgin silicon-on-sapphire (SOS) wafers. The measurement consists of the act ivation of the pseudo-MOS transistor, once the sapphire substrate has been aggressively thinned down to 30 mum. Typical transistor characteristics are measured and used to uncover the parameters that reflect the quality of SO S wafers: carrier mobility, density of interface traps, and residual doping . (C) 2000 Elsevier Science Ltd. Ail rights reserved.