A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology

Authors
Chen, CH Fang, YK Kuo, MH Hsu, YL Hsu, SL
Citation
Ch. Chen et al., A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology, SOL ST ELEC, 44(10), 2000, pp. 1743-1746
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1743 - 1746
Database
ISI
SICI code
0038-1101(200010)44:10<1743:ADCSMT>2.0.ZU;2-S
Abstract
A DC current stress method has been developed to improve the voltage coeffi cient of resistance (VCR) of a poly silicon resistor (poly-R). The DC curre nt stress method had been successfully applied to high voltage CMOS technol ogy and is shown to be effective in reducing the VCR of a poly-R, Applying adequate DC current stress on poly-R, the VCR of the poly-R decreases by 37 % on average. In addition, the mechanism of improvement and the criteria in choosing the adequate DC stressing current are also discussed and develope d. (C) 2000 Elsevier Science Ltd. All rights reserved.