An analytical model for the 3D-RESURF effect

This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junctio n type structures. To account for the two-dimensional (2D) effect of the 3D -RESURF action. 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a fun ction of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also ap plicable to situations involving drift regions which are almost depleted. A ccuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator. (C) 2000 Elsevier Scien ce Ltd. All rights reserved.