Optoelectronic properties of CdO/Si photodetectors

Authors
Ortega, M Santana, G Morales-Acevedo, A
Citation
M. Ortega et al., Optoelectronic properties of CdO/Si photodetectors, SOL ST ELEC, 44(10), 2000, pp. 1765-1769
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1765 - 1769
Database
ISI
SICI code
0038-1101(200010)44:10<1765:OPOCP>2.0.ZU;2-8
Abstract
CdO/Si heterojunctions were fabricated by depositing CdO polycrystalline th in films on p-type single crystalline silicon wafers by CBD. The current-vo ltage characteristics under dark and illumination of CdO/Si devices resembl e those of a light sensitive diode. From the CdO/Si diode spectral sensitiv ity curves (A/W), it has been implied that CdO films allow a high sensitivi ty response in the visible and the near infrared regions. (C) 2000 Elsevier Science Ltd. All rights reserved.