A MOSFET gate current model with the direct tunneling mechanism

In this paper, we report a model for calculating the gate current as a func tion of gate and drain biases by considering the quantum-mechanical effect. Using a WKB approximation for the transmission probability, direct and Fow ler-Nordheim tunneling currents across thin gate oxides of MOSFETs have bee n modeled for carriers from the inversion layers in Si substrate. The model ed direct tunneling currents have been compared to experimental data obtain ed from MOSFETs with oxide thickness of 2 nm. The gate current model is dev eloped by using a pseudo-2D and analytical drain current model as a basis t o generate channel electric field and electron temperature, which is derive d using a simplified energy balance equation. From the electron temperature , we can calculate the non-local gate current. This model is a time-saving CAD model. (C) 2000 Elsevier Science Ltd. All rights reserved.