Effects of high current conduction in sub-micron Ti-silicided films

Modeling and characterization of high current conduction in sub-micron tita nium disilicide (TiSi2) films formed on n(+)/p(+) silicon and n(+)/p(+) pol ysilicon over active or field oxide under DC stress are reported. High curr ent conduction in TiSi2 films is shown to be strongly affected by the fabri cation technology acid process conditions. A model has been developed to ex plain the self-heating effect of silicide films under high DC stress. A par ameter B is used to describe the sensitivity of the films to high current c onduction. We found that the parameter B is linearly related to the initial resistance of the film, the temperature coefficient of resistance of TiSi2 and the thermal impedance of the surrounding structures, and the results a gree well with the experimental data. (C) 2000 Elsevier Science Ltd. All ri ghts reserved.