Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics

Authors
Park, JW Mohammadi, S Pavlidis, D
Citation
Jw. Park et al., Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics, SOL ST ELEC, 44(10), 2000, pp. 1847-1852
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1847 - 1852
Database
ISI
SICI code
0038-1101(200010)44:10<1847:IONATC>2.0.ZU;2-W
Abstract
The collector-emitter offset voltage of GaInP/GaAs HBTs grown by chemical-b eam epitaxy with reduced toxicity precursors is investigated for Ni/Ge/Au/T i/Au and Ti/Pt/Au collector contact metals. The offset voltage for HBTs wit h Ti/Pt/Au collector metal is increased by 0.26 V compared to Ni/Ge/Au/Ti/A u due to the 0.26 eV barrier existing between the n-GaAs subcollector and t he Ti/Pt/Au contact metal. Other parameters affected by the collector conta ct barrier and impacting transistor performance include DC gain, microwave and power performance. (C) 2000 Elsevier Science Ltd. All rights reserved.