Sidegating mechanism as a function of the sidegate-to-channel spacing

Authors
Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation
Ef. Prokhorov et al., Sidegating mechanism as a function of the sidegate-to-channel spacing, SOL ST ELEC, 44(10), 2000, pp. 1857-1860
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1857 - 1860
Database
ISI
SICI code
0038-1101(200010)44:10<1857:SMAAFO>2.0.ZU;2-G
Abstract
It is shown that the type of nonlinearity of the substrate current-voltage characteristic beyond the sidegating threshold changes from super to sublin earity as the sidegate-to-channel spacing increases. Based on this, it is c oncluded that the sidegating mechanism is a function of the sidegate-to-cha nnel spacing. This conclusion is confirmed using a simple one-dimensional c omputational model. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.