Similarity relation for I-V characteristics of FETs with different channelshape

Authors
Dobrovolsky, VN Balucani, M Ferrari, A
Citation
Vn. Dobrovolsky et al., Similarity relation for I-V characteristics of FETs with different channelshape, SOL ST ELEC, 44(10), 2000, pp. 1865-1867
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1865 - 1867
Database
ISI
SICI code
0038-1101(200010)44:10<1865:SRFICO>2.0.ZU;2-B
Abstract
The expression is obtained, that allows applying the theory of FET with a r ectangular channel to transistor with any channel shape. It is valid for FE Ts of all types: SOI MOSFET, bulk MOSFET, JFET, and MESFET. (C) 2000 Publis hed by Elsevier Science Ltd. All rights reserved.