Improved ohmic contact on n-type 4H-SiC

Authors
Gao, Y Tang, Y Hoshi, M Chow, TP
Citation
Y. Gao et al., Improved ohmic contact on n-type 4H-SiC, SOL ST ELEC, 44(10), 2000, pp. 1875-1878
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
10
Year of publication
2000
Pages
1875 - 1878
Database
ISI
SICI code
0038-1101(200010)44:10<1875:IOCON4>2.0.ZU;2-O
Abstract
In this paper, we present a study of a Ti/Ni/Al contact on n-type I H-SIC a nd compare it with Al/Ni/Al contact. X-ray diffraction analysis was used to identify the intermetallic compound formed at the interface and four-point probe method was employed to determine the specific contact resistivity, r ho (c). The contacts were ohmic as-deposited (10(-2) to 10(-3) Omega cm(2)) . After annealing at 1000 degreesC, the specific contact resistivity was 4. 5 x 10(-5) Omega cm(2), which is two times lower than that of the Al/Ni/Al contact prepared in the same way. (C) 2000 Elsevier Science Ltd. All rights reserved.