Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: a voltage-dependent scanning tunneling microscopy study

We have measured the amplitude of the damped periodic lattice response to s ubstitutional Si defect sites on the ML Sn-Si(lll) surface at room temperat ure by means of voltage-dependent scanning tunneling microscopy experiments . This perturbation, which in the case of Si defects mainly shows up as an increased apparent height of the defect first neighbors, is strongly voltag e dependent and vanishes when tunneling at very low voltages (similar to 10 mV), both in filled and empty state images. The observed energy dependence is justified by the vertical hybridization of the surface dangling bond st ates at the Fermi level and by vertical charge rearrangement between the Sn adatoms and the subsurface Si atoms directly below the T-4 site. (C) 2000 Elsevier Science B.V. All rights reserved.